Controlled generation of intrinsic near-infrared color centers in 4H-SiC via 
proton irradiation and annealing

Ruehl, M.; Ott, C.; Götzinger, Stephan; Krieger, M.; Weber, H.B.

doi:10.1063/1.5045859

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Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing

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Götzinger, Stephan
University of Erlangen Nuremberg, Department of Physics;
Sandoghdar Division, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Ruehl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113: 122102. doi:10.1063/1.5045859.

Cite as: https://hdl.handle.net/21.11116/0000-0003-F370-C

Abstract

We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by proton irradiation and subsequent annealing. Using low-temperature photoluminescence (PL), we study the transformation of PL spectra for different proton doses and annealing temperatures. Among well reported defect signatures, we observe omnipresent but not yet identified PL signatures consisting of three sharp and temperature stable lines (denoted TS1,2,3) at 768.8 nm, 812.0 nm, and 813.3 nm. These lines show a strong correlation throughout all measurement parameters, suggesting that they belong to the same microscopic defect. Further, a clear dependence of the TS1,2,3 line intensities on the initial implantation dose is observed after annealing, indicating that the underlying defect is related to implantation induced intrinsic defects. The overall data suggest a sequential defect transformation: proton irradiation initially generates isolated silicon vacancies which are transformed into antisite vacancy complexes which are, in turn, transformed into presumably intrinsic-related defects, showing up as TS1,2,3 PL lines. We present recipes for the controlled generation of these color centers. Published by AIP Publishing.