Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition 
under N2 atmosphere

Mischke, Jan; Pennings, Joel; Weisenseel, Erik; Kerger, Philipp; Rohwerder, Michael; Mertin, Wolfgang; Bacher, Gerd

doi:10.1088/2053-1583/ab8969

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Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphere

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Kerger, Philipp
Corrosion, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Rohwerder, Michael
Corrosion, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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引用

Mischke, J., Pennings, J., Weisenseel, E., Kerger, P., Rohwerder, M., Mertin, W., & Bacher, G. (2020). Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphere. 2D Materials, 7(3):. doi:10.1088/2053-1583/ab8969.

引用: https://hdl.handle.net/21.11116/0000-0008-52F2-A

要旨

One of the bottlenecks in the implementation of graphene as a transparent electrode in modern opto-electronic devices is the need for complicated and damaging transfer processes of high-quality graphene sheets onto the desired target substrates. Here, we study the direct, plasma-enhanced chemical vapor deposition (PECVD) growth of graphene on GaN-based light-emitting diodes (LEDs). By replacing the commonly used hydrogen (H2) process gas with nitrogen (N2), we were able to suppress GaN surface decomposition while simultaneously enabling graphene deposition at lt;800 °C in a single-step growth process. Optimizing the methane (CH4) flow and varying the growth time between 0.5 h and 8 h, the electro-optical properties of the graphene layers could be tuned to sheet resistances as low as ∼1 kΩ/D with a maximum transparency loss of ∼12. The resulting high-quality graphene electrodes show an enhanced current spreading effect and an increase of the emission area by a factor of ∼8 in operating LEDs. © 2020 The Author(s).