Sb-doping induced order to disorder transition enhances the thermal stability 
of NbCoSn1-xSbx half-Heusler semiconductors

Jung, Chanwon; Jang, Kyuseon; Zhang, Siyuan; Bueno Villoro, Ruben; Choi, Pyuck-Pa; Scheu, Christina

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Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors

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Jung, Chanwon
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Zhang, Siyuan
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Bueno Villoro, Ruben
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Scheu, Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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引用

Jung, C., Jang, K., Zhang, S., Bueno Villoro, R., Choi, P.-P., & Scheu, C. (2023). Sb-doping induced order to disorder transition enhances the thermal stability of NbCoSn1-xSbx half-Heusler semiconductors. Talk presented at The 20th International Microscopy Congress, PS-07.2. Microscopy of Semiconductor Materials and Devices. Busan, Republic of Korea. 2023-09-10 - 2023-09-15.

引用: https://hdl.handle.net/21.11116/0000-000E-433D-3

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