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High-pressure raman scattering of biaxially strained GaN on GaAs.

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Goñi,  A. R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Ulrich,  C.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Syassen,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Siegle, H., Goñi, A. R., Thomsen, C., Ulrich, C., Syassen, K., Schöttker, B., et al. (1997). High-pressure raman scattering of biaxially strained GaN on GaAs. In Gallium Nitride and Related Materials II (pp. 225-230). Pittsburgh: Materials Research Society.


Cite as: https://hdl.handle.net/21.11116/0000-000E-D8FC-3
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