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Enhancing the thermoelectric properties via modulation of defects in p-type MNiSn-based (M = Hf, Zr, Ti) half-Heusler materials

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Bueno Villoro,  Ruben
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Zhang,  Siyuan
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Scheu,  Christina
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Ai, X., Lei, B., Cichocka, M. O., Giebeler, L., Bueno Villoro, R., Zhang, S., et al. (2023). Enhancing the thermoelectric properties via modulation of defects in p-type MNiSn-based (M = Hf, Zr, Ti) half-Heusler materials. Advanced Functional Materials, 33(48): 2305582. doi:10.1002/adfm.202305582.


Cite as: https://hdl.handle.net/21.11116/0000-0010-0834-B
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