Experimental/ electrical resistivity; germanium compounds; IV-VI semiconductors; liquid semiconductors; liquid structure; neutron diffraction; tin compounds; van der Waals forces/ structure; liquid IV-VI semiconductors; crystalline structure; stoichiometric IV-VI semiconductors; NaCl structure; distortion amplitude; corrugated planes; covalently bonded atoms; dispersion Van der Waals forces; neutron scattering; liquid phases; GeS; GeSe; GeTe; SnS; SnSe; SnTe; local order; conductivity/ A6125K Structure of molten salts A7220F Low-field transport and mobility; piezoresistance (semiconductors/insulators) A7280P Electrical conductivity of liquid semiconductors/ GeS/bin Ge /bin S/bin; GeSe/bin Ge /bin Se/bin; GeTe/bin Ge /bin Te/bin; SnS/bin Sn /bin S/bin; SnSe/bin Se /bin Sn/bin; SnTe/bin Sn /bin Te/bin
Abstract :
[en] The crystalline structure of most stoichiometric IV-VI semiconductors can be viewed as a distortion of the NaCl structure; the distortion amplitude depends on the components. As a result, corrugated planes of covalently bonded atoms are linked by dispersion (Van der Waals) forces. Neutron scattering experiments were performed on the liquid phases of a series of IV-VI compounds (GeS, GeSe, GeTe, SnS, SnSe and SnTe). We show that the evolution of the local order is correlated with the conductivity measurements
Disciplines :
Physics Chemistry
Author, co-author :
Raty, Jean-Yves ; Université de Liège - ULiège > Département de physique > Physique de la matière condensée
Gaspard, Jean-Pierre ; Université de Liège - ULiège > Département de physique > Département de physique
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Bibliography
Wyckoff, R.W.G., (1964) Crystal Structures, , Wiley, New York
Peierls, R., (1955) Quantum Theory of Solids, , Pergamon, Oxford
Paalman, H.H., Pings, C.J., (1962) J. Appl. Phys., 33, p. 2635
Blech, I.A., Averbach, B.L., (1965) Phys. Rev., 137, pp. A1113
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